AOT472/aotf472 v ds 75v i d (to220 at v gs =10v) 140a i d (to220fl at v gs =10v) 53a r ds(on) (at v gs =10v) < 8.9m symbol v ds v gs i dm i as ,i ar e as ,e ar t j , t stg symbol t 10s steady-state steady-state r jc 340 1.2 1.2 8 417 57.5 208 29 140 g 53 101 37.5 the AOT472 and aotf472 use a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. with low r ds(on) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.36 65 2.6 power dissipation b p d w power dissipation a p dsm w t a =70c t a =25c 1.9 1.9 t c =25c t c =100c a t a =25c i dsm a t a =70c i d t c =25c t c =100c pulsed drain current c continuous drain current avalanche energy l=0.1mh c mj avalanche current c continuous drain current 781 a 125 8 10 10 v units parameter absolute maximum ratings t a =25c unless otherwise noted AOT472 aotf472 v 20 gate-source voltage drain-source voltage 75 units maximum junction-to-ambient a c/w r ja 13.9 65 13.9 parameter AOT472 aotf472 junction and storage temperature range -55 to 175 c thermal characteristics g d s AOT472 aotf472 top view t o-220fl t o-220 g d s g d s www.freescale.net.cn 1/7 75v n-channel mosfet general description features
symbol min typ max units bv dss 75 v v ds =75v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.5 3.3 3.9 v i d(on) 340 a 7.4 8.9 t j =125c 13.6 16.3 g fs 75 s v sd 0.73 1 v i s 140 a c iss 3000 3753 4500 pf c oss 475 679 885 pf c rss 32 54 76 pf r g 1.6 3.2 4.8 q g (10v) 77 96 115 nc q gs 14 17 20 nc q gd 81318nc t d(on) 18 ns t r 38 ns t d(off) 57 ns t f 8ns t rr 36 52 68 ns q rr 365 521 677 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance i f =30a, di/dt=500a/ s v gs =0v, v ds =30v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m i s =1a,v gs =0v v ds =5v, i d =30a v gs =10v, v ds =30v, r l =1 , r gen =3 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =30a gate source charge gate drain charge body diode reverse recovery charge i f =30a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. www.freescale.net.cn 2/7 AOT472/aotf472 75v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 120 140 3 3.5 4 4.5 5 5.5 6 v gs (volts) figure 2: transfer characteristics (note e) i d (a) -40c 5 6 7 8 9 10 11 0 20406080100 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =30a 0 4 8 12 16 20 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ) 25c 125c v ds =5v v gs =10v i d =30a 25c 125c 0 30 60 90 120 150 0246810 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =4.5v 5v 6v 8v 10v 5.5v -40c www.freescale.net.cn 3/7 AOT472/aotf472 75v n-channel mosfet
typical electrical and thermal characteristic s 0 2 4 6 8 10 0 20406080 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 0 102030405060 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =30v i d =30a 0 50 100 150 200 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 4/7 AOT472/aotf472 75v n-channel mosfet
typical electrical and thermal characteristic s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 14: maximum forward biased safe operating area for AOT472 (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 15: maximum forward biased safe operating area for aotf472 (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 s 0 2000 4000 6000 8000 10000 1e-05 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case for AOT472 (note f) power (w) t j(max) =175c t c =25c 1 10 100 1000 10000 0.001 0.1 10 1000 pulse width (s) figure 12: single pulse power rating junction-to- ambient for AOT472 (note h) power (w) t a =25c 0 2000 4000 6000 8000 10000 1e-05 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: single pulse power rating junction-to- case for aotf472 (note f) power (w) t j(max) =175c t c =25c 1 10 100 1000 10000 0.001 0.1 10 1000 pulse width (s) figure 13: single pulse power rating junction-to- ambient for aotf472 (note h) power (w) t a =25c www.freescale.net.cn 5/7 AOT472/aotf472 75v n-channel mosfet
typical electrical and thermal characteristic s 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 16: normalized maximum transient thermal impedance for AOT472 (note f) z jc normalized transient thermal resistance single pulse d=t on /t t j,p k =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r jc =0.36c/w 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 17: normalized maximum transient thermal impedance for aotf472 (note f) z jc normalized transient thermal resistance single pulse d=t on /t t j,p k =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r jc =2.6c/w www.freescale.net.cn 6/7 AOT472/aotf472 75v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 7/7 AOT472/aotf472 75v n-channel mosfet
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